4H-SiC Schottky Barrier Diodes as Radiation Detectors: A Review

Defect Analysis of Barrier Height Inhomogeneity in Titanium 4H-SiC Schottky Barrier Diodes

Graphite based Schottky diodes on Si, GaAs, and 4H-SiC

Todd Schumann, Sefaattin Tongay, Arthur F. Hebard Department of Physics, University of Florida, Gainesville FL 32611 This article demonstrates the formation of Schottky diodes on silicon (Si), gallium arsenide (GaAs), and 4H-silicon carbide (4H-SiC) using the semimetal graphite. The forward bias characteristics follow thermionic emission theory, and the extracted Schottky barrier heights closel...

EFFECT OF HIGH-ENERGY PROTONS ON 4H-SiC RADIATION DETECTORS

We present investigation of high energy radiation detectors based on 4H-SiC as influenced by irradiation with 24 GeV proton doses of up to 10 cm. SiC detectors have been produced from n-type 4H-SiC epilayers grown on the top of the n-type substrate. They were supplied with a nickel ohmic contact on the back surface and a gold Schottky contact on the top. Activities and numbers of Be and Na atom...

Electrothermal Model of SiC Power Schottky Diodes

The paper concerns the problem of modelling d.c. characteristics of commercial SiC power Schottky diodes with self-heating taken into account. The electrothermal model of the investigated devices is proposed and experimentally verified. The evaluation of accuracy of the elaborated model has been performed by comparison of measured and calculated characteristics of selected SiC power Schottky di...

4h-sic Power Schottky Diodes. on the Way to Solve Size Limiting Issues

In this paper we report on experimental results in solving defect-related issues limiting the size and performance of 4H-SiC based power Schottky diodes. Several techniques improving wafer quality were used in line to fabricate power Schottky diodes with high current capability for blocking voltage over 600 V. Results of X-ray investigation of wafers on every step of treatment from initial wafe...